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2010-05-17 1 bfr340f 3 1 2 npn silicon rf transistor ? general purpose low noise amplifier ? ideal for low current operation ? high breakdown voltage enables operation in automotive applications ? minimum noise figure 1.0 db @ 1ma,1.5v,1.9ghz ? small package 1,2 x 1,2 mm 2 with visible leads ? pb-free (rohs compliant) package ? qualified according aec q101 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfr340f fas 1 = b 2 = e 3 = c tsfp-3 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage v ceo 6 v collector-emitter voltage v ces 15 collector-base voltage v cbo 15 emitter-base voltage v ebo 2 collector current i c 20 ma base current i b 2 total power dissipation 1) t s 110c p tot 75 mw junction temperature t j 150 c storage temperature t st g -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 530 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note an077 thermal resistance
2010-05-17 2 bfr340f electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 6 9 - v collector-emitter cutoff current v ce = 4 v, v be = 0, t a = 25c v ce = 10 v, v be = 0, t a = 85c verified by random sampling i ces - - 1 2 30 50 na collector-base cutoff current v cb = 4 v, i e = 0 i cbo - 1 30 emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - 1 500 dc current gain i c = 5 ma, v ce = 3 v, pulse measured h fe 90 120 160 -
2010-05-17 3 bfr340f electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 6 ma, v ce = 3 v, f = 1 ghz f t 11 14 - ghz collector-base capacitance v cb = 5 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.21 0.4 pf collector emitter capacitance v ce = 5 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.17 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.11 - minimum noise figure i c = 3 ma, v ce = 1.5 v, z s = z sopt, f = 100 mhz i c = 1 ma, v ce = 1.5 v, z s = z sopt, f = 1.9 ghz i c = 1 ma, v ce = 1.5 v, z s = z sopt, f = 2.4 ghz nf min - - - 0.9 1 1.2 - - - db
2010-05-17 4 bfr340f electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) maximum power gain 1) i c = 3 ma, v ce = 1.5 v, z s = z sopt, z l = z lopt , f = 100 mhz i c = 5 ma, v ce = 3 v, z s = z sopt, z l = z lopt , f = 1.8 ghz f = 3 ghz g max - - - 28 16.5 13 - - - db transducer gain i c = 3 ma, v ce = 1.5 v, z s = z l = 50 ? , f = 100 mhz i c = 5 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz f = 3 ghz | s 21e | 2 - - - 19 14 10 - - - db third order intercept point at output 2) v ce = 3 v, i c = 5 ma, f = 100 mhz, z s = z l = 50 ? v ce = 3 v, i c = 5 ma, f = 1.8 ghz, z s = z l = 50 ? ip 3 - - 14 13 - - dbm 1db compression point at output v ce = 3v, i c = 5 ma, z s = z l = 50 ? , f = 100 mhz v ce = 3v, i c = 5 ma, z s = z l = 50 ? , f = 1 . 8 ghz p -1db - - -3 -1 - - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2010-05-17 5 bfr340f total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 a 150 0 10 20 30 40 50 60 v 80 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 2 4 6 8 10 12 v 16 v cb 0 0.05 0.1 0.15 0.2 0.25 0.3 pf 0.4 c cb third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f = 1.9ghz 0 2 4 6 8 ma 11 ic -16 -12 -8 -4 0 4 8 12 16 20 dbm 28 ip3 5v 3v 2.5v 2v 1.5v 1v transition frequency f t = ? ( i c ) f = 1ghz v ce = parameter 0 2 4 6 8 ma 12 i c 0 2 4 6 8 10 12 ghz 16 f t 5v 3v 2v 1v 0.75v
2010-05-17 6 bfr340f power gain g ma , g ms = ? ( i c ) f = 1.8ghz v ce = parameter 0 2 4 6 8 ma 12 i c 6 8 10 12 14 16 ma 20 g 5v 3v 2v 1v 0.75v power gain g ma , g ms = ? ( f ) v ce = parameter 0 0.5 1 1.5 2 2.5 3 ghz 4 f 5 10 15 20 25 30 35 db 45 g ic=5ma 5v 3v 2v 1v 0.75v insertion power gain | s 21 |2 = ? ( f ) v ce = parameter 0 0.5 1 1.5 2 2.5 3 ghz 4 f 4 6 8 10 12 14 16 18 20 db 24 g ic=5ma 5v 3v 2v 1v 0.75v power gain g ma , g ms = ? ( v ce ): ?? | s 21 |2 = ? ( v ce ): - - - - f = parameter 0 1 2 3 4 5 6 v 8 v ce 10 11 12 13 14 15 16 17 18 19 20 db 22 g 0.9ghz 1.8ghz 0.9ghz 1.8ghz ic = 5ma
2010-05-17 7 bfr340f power gain g ma , g ms = ? ( i c ) v ce = 3v f = parameter 0 2 4 6 8 10 ma 14 i c 4 6 8 10 12 14 16 18 20 db 24 g 0.9ghz 1.8ghz 2.4ghz 3ghz 4ghz noise figure f = ? ( i c ) v ce = 1.5v, z s = z sopt third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f = 100mhz 0 2 4 6 8 ma 11 ic -16 -12 -8 -4 0 4 8 12 16 20 dbm 28 ip3 5v 3v 2.5v 2v 1.5v 1v noise figure f = ? ( i c ) v ce = 1.5v, f = 1.9ghz
2010-05-17 8 bfr340f noise figure f = ? (f) v ce = 1.5v, z s =z sopt , i c =parameter source impedance for min. noise figure vs. frequency v ce = 1.5v, i c =parameter
2010-05-17 9 bfr340f spice parameter for the spice model as well as for the s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the bfr340f spice model in the internet in mwo- and ads- format which you can import into these circuit simulation tools very quickly and conveniently. the simulation data have been generated and verified using typical devices. the bfr340f spice model reflects the typical dc- and rf-performance with high accuracy.
2010-05-17 10 bfr340f package tsfp-3 4 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 0.05 0.2 3 0.05 1.2 12 10? max. 0.05 0.8 1.2 0.05 0.04 0.55 0.05 0.2 0.05 0.15 0.05 0.2 0.4 0.05 0.4 0.05 0.4 0.45 1.05 0.4 0.4 bcr847bf type code pin 1 0.2 1.35 0.3 0.7 1.2 1.5 8 pin 1 manufacturer
2010-05-17 11 bfr340f datasheet revision history: 17 may 2010 this datasheet replaces the revisions from 02 february 2010 and 30 march 2007. the product itself has not been changed and the device characteristics remain unchanged. only the product description and information available in the datasheet has been expanded and updated. previous revisions: 02 february 2010 and 30 march 2007 page subject (changes since last revision) 1 higher maximum collector and base currents, higher total power dissipation 2 typical values for leakage currents included, maximum leakage currents reduced 3 noise description at 100 mhz added 4 gain and linearity description at 100 mhz added 5 ptot curve adjusted to ptot and icmax changes 5 - 8 curves for ip3 and noise at 100 mhz added
2010-05-17 12 bfr340f edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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